DocumentCode :
2703591
Title :
Transient and frequency analysis of PIN avalanche photodetector using circuit model
Author :
Jalali, Mohammad ; Soroosh, M. ; Farshi, M. K Moravvej ; Nabavi, A.R.
Author_Institution :
Opt. Tech. Lab., Tarbiat Modares Univ., Tehran
fYear :
2005
fDate :
15-17 Sept. 2005
Firstpage :
294
Lastpage :
296
Abstract :
This paper tries to characterize the PIN and avalanche photodiode (APD) in time and frequency domain using the circuit simulation in Spice. For this reason a circuit model of PIN avalanche diodes based on carrier rate equations has been considered. This model is able to pretend dc, ac, and transient response of diode. We contemplate the effects of variation in bias voltage and optical power on frequency and transient response
Keywords :
avalanche photodiodes; circuit simulation; frequency-domain analysis; p-i-n photodiodes; photodetectors; transient analysis; APD; PIN avalanche photodetector; Spice; bias voltage; carrier rate equation; circuit model; circuit simulation; diode transient response; frequency analysis; frequency domain; optical power; time domain; transient analysis; Avalanche photodiodes; Circuit simulation; Diodes; Frequency; Impact ionization; Optical pulses; Photodetectors; Transient analysis; Transient response; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Laser and Fiber-Optical Networks Modeling, 2005. Proceedings of LFNM 2005. 7th International Conference on
Conference_Location :
Yalta, Crimea
Print_ISBN :
0-7803-9147-0
Type :
conf
DOI :
10.1109/LFNM.2005.1553250
Filename :
1553250
Link To Document :
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