Study of feedback technology for gain flatness of UWB LNA

Author

Xie, Hongyun ; Zhang, Wanrong ; Li, Jia ; Shen, Pei ; Huang, Yiwen ; Huang, Lu ; Hu, Ning

Author_Institution

Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China

fYear

2009

fDate

27-29 Oct. 2009

Firstpage

466

Lastpage

469

Abstract

The S parameter expression of the HBT with multiple feedbacks, especial the transmission gain S21, is presented and analyzed. Pure resistive feedback makes better input and output matching. Reactive feedback promotes the amplitude of S21 as the frequency increases, which compensates the inherent decrease of HBT´s gain in high frequency. The gain decrease induced by the resistive feedback is also counteracted. So the gain flatness is realized in the frequency band from 3.1GHz to 10.6GHz.

Keywords

S-parameters; heterojunction bipolar transistors; low noise amplifiers; ultra wideband technology; HBT; S parameter expression; UWB LNA; feedback technology; frequency 3.1 GHz to 10.6 GHz; low noise amplifiers; resistive feedback; Energy consumption; Equivalent circuits; Feedback circuits; HDTV; Heterojunction bipolar transistors; Negative feedback; Noise figure; Pulse amplifiers; Scattering parameters; Ultra wideband technology; Low noise amplifier; Negative feedback; Reactive feedback; Ultra-wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2009 3rd IEEE International Symposium on

Conference_Location

Beijing

Print_ISBN

978-1-4244-4076-4

Type

conf

DOI

10.1109/MAPE.2009.5355634

Filename

5355634