A two heterojunction bipolar photo-transistor configuration for millimeter wave generation and modulation

Author

Lasri, J. ; Bilenca, A. ; Eisenstein, G. ; Ritter, D. ; Orenstein, M. ; Sidorov, V. ; Cohen, S. ; Goldgeier, P.

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

fYear

2000

fDate

2000

Firstpage

62

Lastpage

65

Abstract

We describe an advanced millimeter wave source employing two InP-InGaAs heterojunction bipolar photo-transistors. One, functioning as a 30 GHz self oscillator, was optically injection locked. The second acts as an optoelectronic mixer/modulator for analog and digital signals

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; injection locked oscillators; microwave photonics; millimetre wave generation; millimetre wave mixers; millimetre wave oscillators; modulators; optical communication equipment; phototransistors; 30 GHz; InP-InGaAs; InP/InGaAs phototransistors; MM-wave generation; MM-wave modulation; WDM; advanced millimeter wave source; analog signals; digital signals; heterojunction bipolar phototransistor; optical injection locking; optoelectronic mixer/modulator; photo-HBT; self oscillator; two phototransistor configuration; Heterojunction bipolar transistors; Injection-locked oscillators; Millimeter wave communication; Millimeter wave transistors; Optical attenuators; Optical distortion; Optical filters; Optical modulation; Optical saturation; Optical transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 2000. MWP 2000. International Topical Meeting on

Conference_Location

Oxford

Print_ISBN

0-7803-6455-4

Type

conf

DOI

10.1109/MWP.2000.889786

Filename

889786