Title :
Modeling of the semiconductor devices with the IET and involving the impact ionization
Author :
Prokhorov, E.D. ; Pavlenko, D.V.
Author_Institution :
V.N.Karazin Kharkiv Nat. Univ., Kharkov
Abstract :
The approach to build-up of a numerical model of semiconductor devices on basis of the electron transfer effect is offered in view of the impact ionization, providing stability of an iterative process at origin of the considerable excess concentration of generated by the impact ionization charge carriers
Keywords :
Poisson equation; convergence of numerical methods; electron-hole recombination; impact ionisation; iterative methods; semiconductor device models; charge carrier; convergence; electron-hole recombination; impact ionization; intervalley electron transfer effect; iterative process; microwave noise; semiconductor device modeling; Charge carrier processes; Charge carriers; Electrons; Gunn devices; Impact ionization; Iterative methods; Numerical models; Poisson equations; Semiconductor devices; Stability;
Conference_Titel :
Laser and Fiber-Optical Networks Modeling, 2005. Proceedings of LFNM 2005. 7th International Conference on
Conference_Location :
Yalta, Crimea
Print_ISBN :
0-7803-9147-0
DOI :
10.1109/LFNM.2005.1553251
