A novel high-speed flip-flop circuit using RTDs and HEMTs

Author

Matsuzaki, Hideaki ; Itoh, Toshihiro ; Yamamoto, Masafumi

Author_Institution

NTT Syst. Electron. Labs., Atsugi-shi, Japan

fYear

1999

fDate

4-6 Mar 1999

Firstpage

154

Lastpage

157

Abstract

An RTD (resonant tunneling diode)-based flip-flop circuit with a new configuration is proposed. The circuit features an SCFL interface for both input and output, and achieves high-speed operation with a simplified configuration. The circuit consists of only two RTDs and three HEMTs, and works as a delayed flip-flop (D-FF) with return-to-zero (RZ) mode output. 50 Gbit/s operation is confirmed by SPICE simulation for the SCFL-interfaced D-FF with the proposed configuration. A static binary frequency divider (T-FF) is also designed based on the same concept. It is fabricated by InP-based RTD/HEMT integration technology, and its proper operation of up to 15 GHz is confirmed experimentally

Keywords

HEMT integrated circuits; SPICE; circuit simulation; flip-flops; high-speed integrated circuits; logic simulation; resonant tunnelling diodes; sequential circuits; 15 GHz; 50 Gbit/s; HEMTs; RTDs; SCFL interface; SPICE simulation; delayed flip-flop; high-speed flip-flop circuit; high-speed operation; return-to-zero mode output; static binary frequency divider; Circuit simulation; Delay; Diodes; Flip-flops; Frequency conversion; HEMTs; MODFETs; RLC circuits; Resonant tunneling devices; SPICE;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI, 1999. Proceedings. Ninth Great Lakes Symposium on

Conference_Location

Ypsilanti, MI

ISSN

1066-1395

Print_ISBN

0-7695-0104-4

Type

conf

DOI

10.1109/GLSV.1999.757399

Filename

757399