Title :
High reliability packaging technologies for 175deg.C continuous operation in IGBT module
Author :
Saito, T. ; Nishimura, Y. ; Momose, F. ; Hirao, A. ; Morozumi, A. ; Tamai, Y. ; Mochizuki, E. ; Takahashi, Y.
Author_Institution :
Package Dev. Dept., Fuji Electr. Co., Ltd., Matsumoto, Japan
Abstract :
One solution for increasing the power density in Insulated Gate Bipolar Transistor (IGBT) module is to raise the maximum junction temperature (Tjmax) =175°C against conventional Tjmax=150°C. However, the challenges for Tjmax=175°C operation are the decreased power cycling (P/C) capability. We have already reported the failure mechanisms about P/C test and new technologies for improving P/C capability [1]. Especially power module for e-auto mobility, using high ambient temperature, is required to guarantee the 175°C continuous operation. Moreover it required about 10 times longer thermal cycling (T/C) capability than what is used for industry. In this paper, we report the effort to improve the T/C capability using new technologies for 175°C continuous operation.
Keywords :
insulated gate bipolar transistors; modules; power semiconductor devices; semiconductor device packaging; semiconductor device reliability; IGBT module; continuous operation; failure mechanism; high reliability packaging technologies; insulated gate bipolar transistor module; power cycling capability; temperature 175 C; Aging; Insulated gate bipolar transistors; Reliability; Soldering; Substrates; Tin; 175°C; Power cycling; Reliability; Thermal cycling;
Conference_Titel :
Electronics Packaging and iMAPS All Asia Conference (ICEP-IACC), 2015 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-4-9040-9012-1
DOI :
10.1109/ICEP-IAAC.2015.7111118
