Title :
High performance GaAs/AlGaAs vertical-cavity surface-emitting lasers designed for cryogenic applications
Author :
Lu, BO ; Luo, Wen-Lin ; Cheng, Julian ; Schneider, R.P. ; Kilcoyne, S.P. ; Lear, K.L. ; Zolper, J.C.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
The slope efficiency (ηs) and the output power (P out) of proton-implant-isolated AlGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) improve dramatically as the temperature is decreased, with ηs>90% at 77 K, compared to η s≈20% at room temperature. This suggests that the VCSEL can be a very efficient device for cryogenic applications. In this paper we report the first VCSEL that has been optimized for operation near 77 K, with characteristics that are superior to those of VCSELs operating at room temperature, including high output power (Pout=22 mW), high power conversion efficiency (ηd=32%), high slope efficiency (ηs=75%-95%), low threshold voltage (V th=1.75 V) and current (Ith=2 mA), and low power dissipation (Pd<10 mW for Pout=2.5 mW) for a 20 μm diameter device
Keywords :
III-V semiconductors; aluminium compounds; cryogenic electronics; gallium arsenide; laser cavity resonators; semiconductor lasers; surface emitting lasers; 1.75 V; 2 mA; 20 micron; 22 mW; 32 percent; 75 to 95 percent; 77 K; AlGaAs-GaAs; VCSEL; cryogenic applications; high power conversion efficiency; low power dissipation; low threshold voltage; output power; proton-implant-isolated device; slope efficiency; surface-emitting lasers; vertical-cavity SEL; Cryogenics; Gallium arsenide; Power conversion; Power generation; Power lasers; Surface emitting lasers; Temperature; Threshold voltage; Time of arrival estimation; Vertical cavity surface emitting lasers;
Conference_Titel :
Electronic Components and Technology Conference, 1995. Proceedings., 45th
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-2736-5
DOI :
10.1109/ECTC.1995.517804
