• DocumentCode
    2704120
  • Title

    Cu/BCB hybrid bonding with TSV for 3D integration by using fly cutting technology

  • Author

    Zhi-Cheng Hsiao ; Cheng-Ta Ko ; Hsiang-Hung Chang ; Huan-Chun Fu ; Chia-Wei Chiang ; Chao-Kai Hsu ; Wen-Wei Shen ; Wei-Chung Lo

  • Author_Institution
    Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
  • fYear
    2015
  • fDate
    14-17 April 2015
  • Firstpage
    834
  • Lastpage
    837
  • Abstract
    In this research, the wafer level Cu/BCB hybrid bonding with TSV for 3D integration by using fly cutting technology is proposed. As we know Cu bump surface is rough by electroplating, and BCB is spin-coated on Cu bump wafer induced high topography. Cu bump surface roughness and Cu/BCB co-planarization are improved by fly cutting to achieve good Cu to Cu and BCB to BCB bonding interface without any large bonding voids at 250°C for 30min, and the result of the bonding strength is evaluated by shear test. TSV fabrication, micro-bumping, hybrid bonding, wafer thinning and backside RDL formation are well developed and integrated to perform the 3D integration platform. Cu/BCB hybrid bonding with TSV for 3D integration is successfully developed and demonstrated in this paper.
  • Keywords
    copper; cutting; electroplating; shear strength; spin coating; three-dimensional integrated circuits; wafer bonding; 3D integration; BCB hybrid bonding; Cu; TSV fabrication; backside RDL formation; bonding interface; bonding strength; bonding voids; bump wafer surface roughness; coplanarization; electroplating; fly cutting technology; high topography; hybrid bonding; microbumping; shear test; spin coating; temperature 250 degC; time 30 min; wafer thinning; Bonding; Polymers; Rough surfaces; Surface roughness; Surface topography; Surface treatment; Three-dimensional displays; 3D integration; Cu/BCB Hybrid bonding; Fly cutting; Wafer thinning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging and iMAPS All Asia Conference (ICEP-IACC), 2015 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-4-9040-9012-1
  • Type

    conf

  • DOI
    10.1109/ICEP-IAAC.2015.7111128
  • Filename
    7111128