Title :
Cu/BCB hybrid bonding with TSV for 3D integration by using fly cutting technology
Author :
Zhi-Cheng Hsiao ; Cheng-Ta Ko ; Hsiang-Hung Chang ; Huan-Chun Fu ; Chia-Wei Chiang ; Chao-Kai Hsu ; Wen-Wei Shen ; Wei-Chung Lo
Author_Institution :
Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
In this research, the wafer level Cu/BCB hybrid bonding with TSV for 3D integration by using fly cutting technology is proposed. As we know Cu bump surface is rough by electroplating, and BCB is spin-coated on Cu bump wafer induced high topography. Cu bump surface roughness and Cu/BCB co-planarization are improved by fly cutting to achieve good Cu to Cu and BCB to BCB bonding interface without any large bonding voids at 250°C for 30min, and the result of the bonding strength is evaluated by shear test. TSV fabrication, micro-bumping, hybrid bonding, wafer thinning and backside RDL formation are well developed and integrated to perform the 3D integration platform. Cu/BCB hybrid bonding with TSV for 3D integration is successfully developed and demonstrated in this paper.
Keywords :
copper; cutting; electroplating; shear strength; spin coating; three-dimensional integrated circuits; wafer bonding; 3D integration; BCB hybrid bonding; Cu; TSV fabrication; backside RDL formation; bonding interface; bonding strength; bonding voids; bump wafer surface roughness; coplanarization; electroplating; fly cutting technology; high topography; hybrid bonding; microbumping; shear test; spin coating; temperature 250 degC; time 30 min; wafer thinning; Bonding; Polymers; Rough surfaces; Surface roughness; Surface topography; Surface treatment; Three-dimensional displays; 3D integration; Cu/BCB Hybrid bonding; Fly cutting; Wafer thinning;
Conference_Titel :
Electronics Packaging and iMAPS All Asia Conference (ICEP-IACC), 2015 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-4-9040-9012-1
DOI :
10.1109/ICEP-IAAC.2015.7111128
