DocumentCode :
2704299
Title :
Stability and piezoresistive properties of indium-tin-oxide ceramic strain gages
Author :
Gregory, Otto J. ; You, Tao
Author_Institution :
Dept. of Chem. Eng., Rhode Island Univ., Kingston, RI, USA
Volume :
2
fYear :
2003
fDate :
22-24 Oct. 2003
Firstpage :
801
Abstract :
Thin film strain gages were developed to assess the mechanical behavior of components used for power and propulsion systems in harsh environments. Several types of strain sensors were fabricated with indium tin oxide (ITO) active strain elements and were tested at temperatures up to 1560°C. These ceramic sensors exhibited excellent thermal stability and piezoresistive response at elevated temperature. A self-compensated ceramic strain gage (8 μm thick) with thin film platinum resistors placed in series with the ITO active element exhibited a gage factor of 20.9 and a drift rate of 0.010%/hour at 1443°C. To further increase the sensitivity and responsiveness of the ceramic sensors, uncompensated ITO strain gages prepared with an enlarged active area showed an increased piezoresistive response at 1455°C with a gage factor of 39.1. Thus, at temperatures beyond 1400°C, thickness of the ITO elements played a significant role in the high temperature stability and sensitivity of the gages. Self-compensated ITO sensors prepared with 8 μm thick survived 20 hours at 1481°C with a gage factor 2.36 and drift rate 0.0092%/hour. However, 10 μm thick ITO strain gages were operated at temperatures beyond 1500°C for tens of hours. The latter sensors exhibited a drift rate < 0.00001%/hour and a gage factor of 131 at 1530°C. SEM micrographs of thick ITO sensors revealed a partially sintered microstructure with a uniform distribution of nanopores. To reproduce this microstructure by alternative means, ceramic sensors were prepared in nitrogen rich environments and tested to verify the large piezoresistive response at temperatures above 1550°C. The results of our efforts to improve the stability and piezoresistive response of ITO strain gages at high temperature are presented here and the potential applications of these nanoporous ceramic sensors are discussed.
Keywords :
ceramics; indium compounds; piezoelectric semiconductors; scanning electron microscopy; semiconductor thin films; strain gauges; thermal stability; tin compounds; 10 micron; 1400 degC; 1443 degC; 1455 degC; 1481 degC; 1530 degC; 1550 degC; 1560 degC; 20 h; 8 micron; ITO; InSnO; SEM micrographs; harsh environments; indium-tin-oxide ceramic strain gages; mechanical behavior; nanopores; piezoresistive properties; piezoresistive response; power systems; propulsion systems; responsiveness; self-compensated ceramic strain gage; sensitivity; sintered microstructure; stability; thermal stability; thin film strain gages; Capacitive sensors; Ceramics; Indium tin oxide; Mechanical sensors; Microstructure; Piezoresistance; Stability; Temperature sensors; Testing; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2003. Proceedings of IEEE
Print_ISBN :
0-7803-8133-5
Type :
conf
DOI :
10.1109/ICSENS.2003.1279053
Filename :
1279053
Link To Document :
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