Title :
Resonant tunneling transistors for threshold logic circuit applications
Author :
Pacha, C. ; Glosekjtter, P. ; Goser, K. ; Auer, U. ; Prost, W. ; Tegude, F.J.
Author_Institution :
Dortmund Univ., Germany
Abstract :
Resonant tunneling transistors (RTTs) and linear threshold gates based on monostable-bistable logic transition elements (MOBILEs) are promising candidates for nano-scale integrated circuits. In this paper the design methodology of RTT logic gates is discussed and experimental results of a monolithically integrated NAND-NOR gate are presented. To exploit the computational functionality of threshold logic circuits a depth-2 full adder and a bit-level pipelined ripple carry adder are proposed
Keywords :
adders; field effect logic circuits; flip-flops; high-speed integrated circuits; logic gates; pipeline processing; resonant tunnelling transistors; threshold logic; MOBILEs; NAND-NOR gate; RTT logic gates; bit-level pipelined ripple carry adder; computational functionality; depth-2 full adder; design methodology; linear threshold gates; monostable-bistable logic transition elements; nano-scale integrated circuits; resonant tunneling transistors; threshold logic circuit applications; Clocks; HEMTs; Logic circuits; Logic design; Logic devices; Logic functions; MODFETs; Microwave integrated circuits; Resonant tunneling devices; Voltage;
Conference_Titel :
VLSI, 1999. Proceedings. Ninth Great Lakes Symposium on
Conference_Location :
Ypsilanti, MI
Print_ISBN :
0-7695-0104-4
DOI :
10.1109/GLSV.1999.757452
