Resonant tunneling transistors for threshold logic circuit applications

Author

Pacha, C. ; Glosekjtter, P. ; Goser, K. ; Auer, U. ; Prost, W. ; Tegude, F.J.

Author_Institution

Dortmund Univ., Germany

fYear

1999

fDate

4-6 Mar 1999

Firstpage

344

Lastpage

345

Abstract

Resonant tunneling transistors (RTTs) and linear threshold gates based on monostable-bistable logic transition elements (MOBILEs) are promising candidates for nano-scale integrated circuits. In this paper the design methodology of RTT logic gates is discussed and experimental results of a monolithically integrated NAND-NOR gate are presented. To exploit the computational functionality of threshold logic circuits a depth-2 full adder and a bit-level pipelined ripple carry adder are proposed

Keywords

adders; field effect logic circuits; flip-flops; high-speed integrated circuits; logic gates; pipeline processing; resonant tunnelling transistors; threshold logic; MOBILEs; NAND-NOR gate; RTT logic gates; bit-level pipelined ripple carry adder; computational functionality; depth-2 full adder; design methodology; linear threshold gates; monostable-bistable logic transition elements; nano-scale integrated circuits; resonant tunneling transistors; threshold logic circuit applications; Clocks; HEMTs; Logic circuits; Logic design; Logic devices; Logic functions; MODFETs; Microwave integrated circuits; Resonant tunneling devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI, 1999. Proceedings. Ninth Great Lakes Symposium on

Conference_Location

Ypsilanti, MI

ISSN

1066-1395

Print_ISBN

0-7695-0104-4

Type

conf

DOI

10.1109/GLSV.1999.757452

Filename

757452