• DocumentCode
    2704552
  • Title

    Oversampled capacitance-to-voltage converter IC with application to SiC MEMS resonator

  • Author

    Lei, S. ; Garverick, S. ; Stefanescu, S. ; Zorman, C.

  • Author_Institution
    Dept. of EECS, Case Western Reserve Univ., Cleveland, OH, USA
  • Volume
    2
  • fYear
    2003
  • fDate
    22-24 Oct. 2003
  • Firstpage
    882
  • Abstract
    This paper reports the first electronic circuit used to measure MEMS resonator motion in the time domain. The measurement of shuttle position is made using a capacitance-to-voltage converter IC that has been developed by combining correlated double sampling with delta modulation in a fully differential circuit topology. This oversampling circuit may be adjusted to trade bandwidth (sample rate) for resolution, while reference level may be adjusted to set the desired sensitivity to accommodate a large range of capacitive sensor interface applications. For example, test results demonstrate a resolution of 170 aF for a signal bandwidth of 3 kHz, a 68-dB dynamic range, and nonlinearity less than 0.16%.
  • Keywords
    capacitive sensors; micromechanical resonators; microsensors; silicon compounds; wide band gap semiconductors; 170 aF; 3 kHz; MEMS resonator motion; SiC; SiC MEMS resonator; bandwidth; capacitive sensor interface applications; delta modulation; dynamic range; electronic circuit; fully differential circuit topology; n6nlinearity; oversampled capacitance-to-voltage converter IC; resolution; sample rate; shuttle position; signal bandwidth; time domain; Application specific integrated circuits; Bandwidth; Capacitance measurement; Electronic circuits; Micromechanical devices; Motion measurement; Position measurement; Signal resolution; Silicon carbide; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2003. Proceedings of IEEE
  • Print_ISBN
    0-7803-8133-5
  • Type

    conf

  • DOI
    10.1109/ICSENS.2003.1279069
  • Filename
    1279069