Alignable lift-off transfer of device arrays via a single polymeric carrier membrane

Author

Callahan, John J. ; Dohle, Rainer ; Martin, K.P. ; Drabik, Timothy J.

Author_Institution

Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA

fYear

1995

fDate

21-24 May 1995

Firstpage

1274

Lastpage

1277

Abstract

We report epitaxial liftoff and direct bonding of GaAs/Al_xGa_1-xAs heterostructure device arrays and continuous films, using a single, transparent polymer membrane to support the material during the etch of the sacrificial layer and to manipulate it into position for bonding in minutes. Au-Sn eutectic alloy bonding leads to a metallurgical bond in minutes. Absorption and current-voltage characteristics show that the material quality is not substantially degraded in the transfer process

Keywords

III-V semiconductors; aluminium compounds; etching; gallium arsenide; integrated circuit technology; integrated optoelectronics; GaAs-AlGaAs; OEICs; absorption characteristics; alignable lift-off transfer; current-voltage characteristics; direct bonding; epitaxial liftoff; etching; eutectic alloy bonding; heterostructure device arrays; metallurgical bond; polymeric carrier membrane; sacrificial layer; transfer process; Biomembranes; Bonding; Gallium arsenide; Gold; Microassembly; Polyimides; Polymer films; Solvents; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 1995. Proceedings., 45th

Conference_Location

Las Vegas, NV

Print_ISBN

0-7803-2736-5

Type

conf

DOI

10.1109/ECTC.1995.517855

Filename

517855