Advanced single poly BiCMOS technology for high performance programmable TTL/ECL applications

Author

Iranmanesh, Ali ; Jurichich, Steve ; Ilderem, Vida ; Jerome, Rick ; Joshi, SP ; Biswal, Madan ; Bastani, Bami

Author_Institution

National Semicond., Puyallup, WA, USA

fYear

1990

fDate

17-18 Sep 1990

Firstpage

154

Lastpage

157

Abstract

An optimized process has been developed by integration of several high-performance device modules such as PtSi Schottky barrier diodes, lateral p-n-p transistors, and electrically programmable fuse elements into the 0.6-μm L_eff high-performance advanced BiCMOS (ABiC IV) process. Due to unique device/process requirements for each module, a process flow has been designed to completely decouple the individual modules from each other to prevent process marginalities and tradeoffs. This technology is especially attractive for high-performance and high-density BiCMOS TTL/ECL (transistor transistor logic/emitter coupled logic) applications requiring electrically programmable fuse elements

Keywords

BIMOS integrated circuits; emitter-coupled logic; integrated circuit technology; integrated logic circuits; transistor-transistor logic; 0.6 micron; ABiC IV; PtSi; Schottky barrier diodes; electrically programmable fuse elements; emitter coupled logic; lateral p-n-p transistors; polycrystalline Si; programmable TTL/ECL applications; single poly BiCMOS technology; transistor transistor logic; BiCMOS integrated circuits; CMOS technology; Fuses; Implants; Logic arrays; MOS devices; Programmable logic arrays; Schottky barriers; Schottky diodes; Semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1990., Proceedings of the 1990

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/BIPOL.1990.171151

Filename

171151