220 MHz optical receiver with large-area integrated PIN photodiode

Author

Förtsch, Michael ; Zimmermann, Horst ; Pless, Holger

Author_Institution

Inst. of Electr. Measurements & Circuit Design, Vienna Univ. of Technol., Austria

Volume

2

fYear

2003

fDate

22-24 Oct. 2003

Firstpage

1012

Abstract

We propose a PIN photodiode combining high responsivity, fast drift times and low junction capacitance in BiCMOS technology. This fast PIN photodiode allows the design of fast optoelectronic integrated circuits (OEIC) for many advanced applications in optical sensing, optical data transmission and optical storage systems. Because of the low capacitance of 0.0105fF/ μm² it is possible to design fast OEICs with large-area photodetectors. The proposed optical receiver applying a PIN photodiode with a diameter of 500 μm and a capacitance of only 2pF attains a -3dB bandwidth of 220MHz, which corresponds to a maximum data rate of 300Mbit/s.

Keywords

BiCMOS integrated circuits; integrated optoelectronics; optical sensors; p-i-n photodiodes; photodetectors; transient response; 2 pF; 220 MHz; 220 MHz optical receiver; 500 micron; BiCMOS technology; fast drift times; fast optoelectronic integrated circuits; high responsivity; large-area integrated PIN photodiode; low junction capacitance; optical data transmission; optical sensing; optical storage systems; Application specific integrated circuits; BiCMOS integrated circuits; Capacitance; Integrated circuit technology; Integrated optics; Optical design; Optical receivers; Optical sensors; PIN photodiodes; Photonic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2003. Proceedings of IEEE

Print_ISBN

0-7803-8133-5

Type

conf

DOI

10.1109/ICSENS.2003.1279095

Filename

1279095