A high-power Ka-band power amplifier design based on GaAs P-HEMT technology for VSAT ODU applications

Author

Li, De-Zhong ; Wang, Cong ; Huang, Wen-Cheng ; Krishna, Remya ; Cho, Sung-Jin ; Shrestha, Bhanu ; Kyung, Gear Inpyo ; Kim, Nam-Young

Author_Institution

RFIC Center, Kwangwoon Univ., Seoul, South Korea

fYear

2009

fDate

27-29 Oct. 2009

Firstpage

20

Lastpage

23

Abstract

In this paper, a Ka-band GaAs pseudomorphic high electron mobility transistor (P-HEMT) monolithic microwave integrated circuit (MMIC) power amplifier for very small aperture terminal (VSAT) outdoor unit (ODU) transmitter applications in demonstrated. This three-stage power amplifier is designed to fully match the 50 Â¿ input and output impedances. With 6 V and -0.75 V DC bias, a small signal gain of 11 dB, a 1 dB compression power (P_1dB) of 29.5 dBm, a power added efficiency (PAE) of 31%, and a better than -15 dB input return loss are achieved from 28.5 to 31.5 GHz. The proposed Ka-band power amplifier is designed within a die size of about 3.344 Ã— 1.964 mm² on GaAS substrate.

Keywords

III-V semiconductors; MMIC power amplifiers; field effect MIMIC; field effect MMIC; gallium arsenide; high electron mobility transistors; millimetre wave power amplifiers; radio transmitters; satellite ground stations; GaAs; MMIC; P-HEMT technology; VSAT ODU applications; efficiency 31 percent; frequency 28.5 GHz to 31.5 GHz; high-power Ka-band power amplifier design; monolithic microwave integrated circuit power amplifier; pseudomorphic high electron mobility transistor; resistance 50 ohm; three-stage power amplifier; very small aperture terminal outdoor unit transmitter applications; voltage -0.75 V; voltage 6 V; Electron mobility; Gallium arsenide; HEMTs; High power amplifiers; Integrated circuit technology; MMICs; MODFETs; Microwave transistors; PHEMTs; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2009 3rd IEEE International Symposium on

Conference_Location

Beijing

Print_ISBN

978-1-4244-4076-4

Type

conf

DOI

10.1109/MAPE.2009.5355712

Filename

5355712