Pyroelectric properties of PZT(90/10) thin films on Pt/Si substrates

Author

Huang, Jie ; Lian, Jingyu ; Buchanan, Relva C.

Author_Institution

Dept. of Mater. Sci. & Eng., Cincinnati Univ., OH, USA

Volume

2

fYear

1996

fDate

18-21 Aug 1996

Firstpage

623

Abstract

The pyroelectric properties of PZT (90/10) thin films were investigated. The films were prepared by metallo-organic spin deposition (MOD) technique on Pt(111)/Si substrates. Dense, (111)-oriented films, ~1.0 μm thick, had a remnant polarization of 13-20 μC/cm² and a coercive field of 10~30 kV/cm. By using static measurement, a pyroelectric coefficient of the order of 10^-8 C/cm² K was determined in the temperature range of 25~140°C, comparable to bulk PZT (90/10) ceramics. Under dynamic pyroelectric measurement conditions, using chopped laser radiation, current and voltage response was detected. Thermal-electric conversion studies indicated significant potential for infrared imaging and energy conversion applications for these PZT films

Keywords

ferroelectric thin films; lead compounds; piezoceramics; pyroelectricity; 25 to 140 C; PZT; PZT thin film; PbZrO3TiO3; Pt-Si; Pt/Si substrate; chopped laser radiation; coercive field; dynamic measurement; energy conversion; infrared imaging; metallo-organic spin deposition; pyroelectric coefficient; remnant polarization; static measurement; thermal-electric conversion; Ceramics; Current measurement; Infrared imaging; Polarization; Pyroelectricity; Radiation detectors; Semiconductor films; Semiconductor thin films; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on

Conference_Location

East Brunswick, NJ

Print_ISBN

0-7803-3355-1

Type

conf

DOI

10.1109/ISAF.1996.598065

Filename

598065