Title :
Pyroelectric properties of PZT(90/10) thin films on Pt/Si substrates
Author :
Huang, Jie ; Lian, Jingyu ; Buchanan, Relva C.
Author_Institution :
Dept. of Mater. Sci. & Eng., Cincinnati Univ., OH, USA
Abstract :
The pyroelectric properties of PZT (90/10) thin films were investigated. The films were prepared by metallo-organic spin deposition (MOD) technique on Pt(111)/Si substrates. Dense, (111)-oriented films, ~1.0 μm thick, had a remnant polarization of 13-20 μC/cm2 and a coercive field of 10~30 kV/cm. By using static measurement, a pyroelectric coefficient of the order of 10-8 C/cm2 K was determined in the temperature range of 25~140°C, comparable to bulk PZT (90/10) ceramics. Under dynamic pyroelectric measurement conditions, using chopped laser radiation, current and voltage response was detected. Thermal-electric conversion studies indicated significant potential for infrared imaging and energy conversion applications for these PZT films
Keywords :
ferroelectric thin films; lead compounds; piezoceramics; pyroelectricity; 25 to 140 C; PZT; PZT thin film; PbZrO3TiO3; Pt-Si; Pt/Si substrate; chopped laser radiation; coercive field; dynamic measurement; energy conversion; infrared imaging; metallo-organic spin deposition; pyroelectric coefficient; remnant polarization; static measurement; thermal-electric conversion; Ceramics; Current measurement; Infrared imaging; Polarization; Pyroelectricity; Radiation detectors; Semiconductor films; Semiconductor thin films; Temperature distribution; Voltage;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.598065
