Title :
Suppressing stress-induced and electromigration failures with Al/Al stacked structure
Author :
Shima, Shohei ; Ito, H. ; Shingubara, S.
Abstract :
A Al/Al stacked multilayered interconnection that can suppress both stress-induced and electromigration failures without barrier metal was developed. Stress-induced failures are almost completely suppressed and electromigration lifetime is improved more than four times. The higher reliability mechanism is explained in terms of graphed results of the microstructure and mechanical properties
Keywords :
VLSI; aluminium; electromigration; metallisation; reliability; Al-Al; Al/Al stacked multilayered interconnection; Al/Al stacked structure; VLSI; electromigration failures suppression; electromigration lifetime; mechanical properties; microstructure; stress induced failures suppression;
Conference_Titel :
VLSI Technology, 1990. Digest of Technical Papers.1990 Symposium on
Conference_Location :
Honolulu, Hawaii, USA
DOI :
10.1109/VLSIT.1990.110991
