Title :
Sub-atmospheric chemical vapor deposition (SACVD) of TEOS-ozone USG and BPSG
Author :
Lee, Peter ; Galiano, Maria ; Keswick, Peter ; Wong, Jerry ; Shin, Bok ; Wang, David
Author_Institution :
Applied Mater. Inc., Santa Clara, CA, USA
Abstract :
Summary form only given. TEOS and ozone based USG and BPSG deposited by subatmospheric CVD (SACVD) have shown good film properties and planarization abilities on high-aspect-ratio structures. The SACVD reactor is capable of operating from low pressure to nearly atmospheric pressure and also in plasma mode. SACVD USG and SACVD BPSG using trimethylborate (TMB) and triethylphosphite (TEP) as dopants are described. In addition, in-situ integration of SACVD, plasma-enhanced CVD (PECVD), and etchback processes is discussed
Keywords :
CVD coatings; borosilicate glasses; chemical vapour deposition; glass; integrated circuit technology; phosphosilicate glasses; silicon compounds; B2O3-P2O5-SiO2; BPSG; SACVD reactor; TEOS-ozone USG; dopants; etchback processes; film properties; high-aspect-ratio structures; planarization; plasma mode; plasma-enhanced CVD; subatmospheric CVD; triethylphosphite; trimethylborate; undoped silicate glass; Chemical vapor deposition; Etching; Inductors; Moisture; Planarization; Plasma applications; Plasma materials processing; Plasma properties; Smoothing methods; Testing;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1990.127910
