Title :
Design, analysis of high electron mobility field effect transistors by a self-consistent method
Author :
Liu, D.G. ; Lee, C.P. ; Hwang, H.L.
Author_Institution :
Inst. of Electron., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan
Abstract :
Three HEMT (high-electron-mobility transistor) structures, the single-heterostructure HEMT (SH-HEMT), the quantum-well HEMT (QW-HEMT) and the delta-doped HEMT (δ-HEMT), are analyzed theoretically by solving the Schrodinger equation and Poisson equation self-consistently. The potential and the carrier distribution as well as the charge control by gate bias are calculated for different structural parameters. Parallel conduction in AlGaAs, which is severe for SH-HEMTs, is greatly reduced in QW-HEMT and δ-HEMT structures. The effect of layer parameters such as spacer-layer thickness and quantum-well width on device performance has been studied
Keywords :
III-V semiconductors; Schrodinger equation; aluminium compounds; carrier density; gallium arsenide; high electron mobility transistors; semiconductor quantum wells; AlGaAs; HEMT; Poisson equation; Schrodinger equation; carrier distribution; charge control; delta-doped; gate bias; high electron mobility field effect transistors; quantum-well; quantum-well width; self-consistent method; single-heterostructure; spacer-layer thickness; structural parameters; Design engineering; Design methodology; Electron mobility; FETs; HEMTs; Poisson equations; Potential energy; Semiconductor devices; Structural engineering; Voltage;
Conference_Titel :
VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/VTSA.1989.68596
