A high speed and high reliability MOSFET utilizing an auxiliary gate

For future submicron MOSFETs, the realization of both high speed and high reliability is becoming more and more difficult. A conventional LDD structure is not adequately reliable for future submicron MOSFETs due to the high electric field in the vicinity of the drain junction. To decrease the electric field, gate-overlap LDD (GOLDD) structures have been proposed. However, these structures have larger gate-drain and gate-source overlap capacitance which results in a slow circuit speed. This research demonstrates a novel auxiliary-gate lightly-doped-drain (AGLDD) structure which realizes high speed and high reliability simultaneously