DocumentCode
2705362
Title
50% active-power saving without speed degradation using standby power reduction (SPR) circuit
Author
Seta, K. ; Hara, H. ; Kuroda, Tadahiro ; Kakumu, M. ; Sakurai, T.
Author_Institution
Toshiba Corp., Kanagawa, Japan
fYear
1995
fDate
15-17 Feb. 1995
Firstpage
318
Lastpage
319
Abstract
High-speed and low-power are required for multimedia LSIs, since portability with battery operation is sometimes the key factor for multimedia equipment, while delivering giga operations per second (GOPS) processing power for digital video use. To understand circuit delay and power dissipation dependence on power supply voltage (V/sub DD/) and threshold voltage of MOSFETs (V/sub TH/), a typical logic circuit is investigated. Fanout is chosen to be 5 which corresponds to the statistical average of gate load in ASICs. A simulated delay dependence on V/sub DD/ and V/sub TH/ is presented. The same V/sub TH/ is chosen for nMOS and pMOS. It is shown that if V/sub TH/ is reduced to 0.3V, V/sub DD/ can be decreased down to 2V while maintaining the speed at V/sub TH/=0.7V and V/sub DD/=3V which is the typical operation condition for high-speed LSIs. The active power dissipation, in this case, is reduced by more than 50%.
Keywords
MOS logic circuits; emergency power supply; large scale integration; power supply circuits; ASICs; GOPS processing power; MOSFETs; active power dissipation; battery operation; digital video; energy delay product; fanout; high-speed low-power LSIs; logic circuit; multimedia equipment; portability; standby power reduction circuit; threshold voltage; Batteries; Circuit simulation; Degradation; Delay; Logic circuits; MOS devices; MOSFETs; Power dissipation; Power supplies; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1995. Digest of Technical Papers. 41st ISSCC, 1995 IEEE International
Conference_Location
San Francisco, CA, USA
ISSN
0193-6530
Print_ISBN
0-7803-2495-1
Type
conf
DOI
10.1109/ISSCC.1995.535572
Filename
535572
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