Title :
Surface acoustic wave filters in ZnO-SiO2-Si layered structures
Author :
Visser, J.H. ; Vellekoop, M.J. ; Venema, A. ; Drift, E. Van der ; Rek, P.J.M. ; Nederlof, A.J. ; Nieuwenhuizen, M.S.
Author_Institution :
Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
Abstract :
The monolithic integration of SAW (surface acoustic wave) devices in a ZnO-SiO2-Si layered structure with high-frequency electronic circuitry has been demonstrated. The high-resolution technology for the fabrication of the aluminum interdigital pattern-electron beam lithography, bilayer masking, and dry etching-is explained and illustrated with SEM (scanning electron microscope) photographs. Experimental results on a SAW delay line, a SAW transversal filter, and a SAW resonator filter show the feasibility of obtaining on-chip selectivity with SAW filters. A passivation of the sputtered, piezoelectric ZnO layer has been realized with a thin silicon nitride layer, resulting in an increased stability of the frequency response of the SAW device. A single-chip FM upconversion radio receiver with an on-chip SAW filter is discussed
Keywords :
II-VI semiconductors; electron beam lithography; passivation; passive filters; scanning electron microscopy; silicon; silicon compounds; sputter etching; surface acoustic wave filters; zinc compounds; Al interdigital pattern; SAW delay line; SAW devices; SAW resonator filter; SAW transversal filter; SEM photographs; Si3N4; ZnO-SiO2-Si layered structure; bilayer masking; dry etching; electron beam lithography; frequency response; high-frequency electronic circuitry; high-resolution technology; monolithic integration; on-chip selectivity; passivation; piezoelectric layer; scanning electron microscope; semiconductors; single-chip FM upconversion radio receiver; sputtering; surface acoustic wave devices; Acoustic beams; Acoustic waves; Aluminum; Fabrication; Lithography; Monolithic integrated circuits; SAW filters; Scanning electron microscopy; Surface acoustic wave devices; Surface acoustic waves;
Conference_Titel :
Ultrasonics Symposium, 1989. Proceedings., IEEE 1989
Conference_Location :
Montreal, Que.
DOI :
10.1109/ULTSYM.1989.66982