DocumentCode :
270550
Title :
Resistive switching behaviour in ZnO and VO2 memristors grown by pulsed laser deposition
Author :
Macaluso, R. ; Mosca, M. ; Costanza, V. ; D´Angelo, A. ; Lullo, G. ; Caruso, F. ; CaliÌ€, C. ; Di Franco, Fabio ; Santamaria, Mikel ; Di Quarto, F.
Author_Institution :
Dept. of Energy, Inf. Eng., & Math. Models - DEIM, Univ. di Palermo, Palermo, Italy
Volume :
50
Issue :
4
fYear :
2014
fDate :
February 13 2014
Firstpage :
262
Lastpage :
263
Abstract :
The resistive switching behaviour observed in microscale memristors based on laser ablated ZnO and VO2 is reported. A comparison between the two materials is reported against an active device size. The results show that devices up to 300 × 300 μm2 exhibit a memristive behaviour regardless of the device size, and 100 × 100 μm2 ZnO-based memristors have the best resistance off/on ratio.
Keywords :
II-VI semiconductors; memristors; pulsed laser deposition; switching; vanadium compounds; wide band gap semiconductors; zinc compounds; VO2; ZnO; active device size; laser ablation; microscale memristors; pulsed laser deposition; resistive switching behaviour;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2013.3175
Filename :
6746272
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=270550
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