• DocumentCode
    2705508
  • Title

    Photo assisted LPCVD TiN for deep submicron contacts using organo-titanium compound

  • Author

    Ikeda, K. ; Maeda, Munenori ; Arita, Y.

  • fYear
    1990
  • fDate
    4-7 June 1990
  • Firstpage
    61
  • Lastpage
    62
  • Abstract
    Work on forming high-quality TiN barrier layers by low-pressure chemical vapor deposition (LPCVD) in deep-submicron contacts is reported. A high-quality titanium nitride film was prepared by the photo-assisted LPCVD method using a new organo-titanium compound, Cp2Ti(N3)2, that does not contain chlorine atoms. The film exhibits sufficient barrier effect to withstand 450°C annealing as well as low resistivity, and adequate step coverage. This fabrication method can be used at lower deposition temperatures
  • Keywords
    CVD coatings; annealing; metallisation; semiconductor technology; titanium compounds; 450 degC; TiN barrier layers; annealing; barrier effect; deep submicron contacts; deposition temperatures; fabrication method; low-pressure chemical vapor deposition; organic compounds; photo-assisted LPCVD method; resistivity; step coverage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1990. Digest of Technical Papers.1990 Symposium on
  • Conference_Location
    Honolulu, Hawaii, USA
  • Type

    conf

  • DOI
    10.1109/VLSIT.1990.111008
  • Filename
    5727468
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2705508