DocumentCode :
2705527
Title :
Formation of ultra-shallow low-reverse current n+p junctions by 450°C furnace annealing
Author :
Shibata, Takuma ; Okita, A. ; Kato, Y. ; Ohmi, T. ; Nitta, Tom
fYear :
1990
fDate :
4-7 June 1990
Firstpage :
63
Lastpage :
64
Abstract :
Experimental results are reported of the successful formation of ultra-shallow low-reverse-current junctions by arsenic implantation followed by furnace annealing at 450°C. The junction depth and the sheet resistance of the 450°C annealed junctions are 60 nm and 150 Ω/square, respectively. The reverse bias current at -5 V is 1.5×10-7 A/cm2, which is about three orders of magnitude smaller than previously reported data. These results were obtained by an ultraclean ion implantation technology in which wafer surface contamination during the ion implantation process has been largely eliminated
Keywords :
annealing; arsenic; elemental semiconductors; ion implantation; p-n homojunctions; semiconductor doping; silicon; 450 degC; 60 nm; Si:As; furnace annealing; junction depth; reverse bias current; sheet resistance; ultra-shallow low-reverse current n+p junctions; ultraclean ion implantation technology; wafer surface contamination;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1990. Digest of Technical Papers.1990 Symposium on
Conference_Location :
Honolulu, Hawaii, USA
Type :
conf
DOI :
10.1109/VLSIT.1990.111009
Filename :
5727469
Link To Document :
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