Title :
Two-dimensional simulation of band-to-band tunneling in an LDD-MOSFET: explanation of experimental results and prediction of new phenomena
Author :
Orlowski, M. ; Sun, S.W. ; Blakey, P. ; Subrahmanyan, R.
Abstract :
A generalization of band-to-band tunneling (BTBT) in two dimensions was implemented using a MINIMOS device simulator. The BTBT-related leakage currents of a MOSFET were simulated as functions of drain/gate bias, oxide thickness, and lightly-doped drain (LDD) structure and found to be in agreement with experiment. It is found that in the deep subthreshold regime at high drain voltage, the leakage currents result from the combined effects of BTBT and impact ionization. The model allows a quantitative explanation of the recently reported enhanced transistor degradation due to BTBT. In addition, a new mode of BTBT-related leakage for deep-submicron MOSFETs in the entire channel region is predicted
Keywords :
impact ionisation; insulated gate field effect transistors; semiconductor device models; tunnelling; BTBT-related leakage currents; LDD-MOSFET; MINIMOS device simulator; band-to-band tunneling; channel region; deep subthreshold regime; drain bias; enhanced transistor degradation; gate bias; impact ionization; lightly-doped drain; oxide thickness;
Conference_Titel :
VLSI Technology, 1990. Digest of Technical Papers.1990 Symposium on
Conference_Location :
Honolulu, Hawaii, USA
DOI :
10.1109/VLSIT.1990.111011
