Title :
A spill over effect of avalanche generated electrons in buried pMOSFETs
Author :
Hiroki, A. ; Odanaka, S. ; Morii, T.
Abstract :
Hot carrier effects of a buried pMOSFET in the retrograde n-well have been investigated. A new phenomenon, a spill-over effect of avalanche-generated electrons into the bulk, was discovered. This effect is inherent in pMOSFETs fabricated in the n-well with high doping. It is shown that the effect reduces the hot-electron-induced device degradation even with high hot-electron generation
Keywords :
doping profiles; hot carriers; impact ionisation; insulated gate field effect transistors; avalanche generated electrons; buried pMOSFETs; hot-electron-induced device degradation; retrograde n-well; spill over effect;
Conference_Titel :
VLSI Technology, 1990. Digest of Technical Papers.1990 Symposium on
Conference_Location :
Honolulu, Hawaii, USA
DOI :
10.1109/VLSIT.1990.111013
