Title :
Lower submicron FCBiMOS (fully complementary BiMOS) process with RTP and MeV implanted 5 GHz vertical PNP transistor
Author :
Maeda, T. ; Ishimaru, K. ; Momose, H.
Abstract :
A method of high-performance and simple fully complementary bipolar MOS (FCBiMOS) process integration is proposed that is compatible with a conventional 0.5-μm CMOS and BiCMOS process. This process is based on two key technologies. One is a high-dose boron MeV ion implantation combined with an epitaxial wafer. The other is rapid thermal processing (RTP) for high current gain. It has been confirmed that use of a oxygen-free epitaxial wafer solves the problem of MeV ion implantation for a device application with the residual secondary defects. As a result, a pnp transistor with a cut-off frequency of 5 GHz and a current gain of 85 was achieved without any tradeoff of other device characteristics
Keywords :
BIMOS integrated circuits; boron; elemental semiconductors; integrated circuit technology; ion implantation; silicon; 0.5 micron; 5 GHz; Si:B; current gain; cut-off frequency; device characteristics; epitaxial wafer; fully complementary BiMOS; ion implantation; process integration; rapid thermal processing; residual secondary defects; submicron FCBiMOS; vertical PNP transistor;
Conference_Titel :
VLSI Technology, 1990. Digest of Technical Papers.1990 Symposium on
Conference_Location :
Honolulu, Hawaii, USA
DOI :
10.1109/VLSIT.1990.111017
