MISiC-FET devices with bias controlled baseline and gas response

The drain current-voltage characteristics of a chemical gas sensor based on a catalytic metal insulator silicon carbide field effect transistor (MISiC-FET) was measured in H₂ and O₂ ambient while applying negative substrate bias at temperatures up to 600°C. It is reported that the gas sensitivity can be amplified and the position of the base-line controlled by applying a negative substrate bias to the MISiC-FET device, which is a buried short channel device. This is possible in a wide range of drain current levels and over a large temperature range.