DocumentCode :
2706045
Title :
A new aspect on mechanical stress effects in scaled MOS devices
Author :
Hamada, A. ; Furusawa, T. ; Takeda, E.
fYear :
1990
fDate :
4-7 June 1990
Firstpage :
113
Lastpage :
114
Abstract :
MOS device characteristics were investigated by imposing external mechanical stress on a Si chip and experimental results are physically evaluated using mechanical stress simulation. Deviation of device characteristics due to external stress is strongly dependent on gate length. This is due to a redistribution of stress in the channel by external stress, which is a strong function of length. That is, the shorter the gate length, the smaller the surface stress due to external stress along the channel. Experiments on hot-carrier injection shows that external compressive stress longitudinal to the current flow increases the capture rate of hot electrons in SiO2 and that tensile stress has less influence in both NMOS and PMOS. In deep-submicron devices, the external stress effect tends to be less. This will be favorable for final fabrication like packaging
Keywords :
MOS integrated circuits; hot carriers; large scale integration; packaging; stress effects; NMOS; PMOS; Si-SiO2; capture rate; compressive stress; deep-submicron devices; external mechanical stress; external stress; gate length; hot electrons; hot-carrier injection; mechanical stress effects; mechanical stress simulation; packaging; scaled MOS devices; surface stress; tensile stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1990. Digest of Technical Papers.1990 Symposium on
Conference_Location :
Honolulu, Hawaii, USA
Type :
conf
DOI :
10.1109/VLSIT.1990.111034
Filename :
5727494
Link To Document :
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