Title :
Reliability imposed constraints on current density of high performance poly-emitter bipolar transistors
Author_Institution :
Nat. Semicond. Corp., Puyallup, WA, USA
Abstract :
The hot carrier induced degradation of self-aligned poly-emitter bipolar transistors under forward active stress at elevated temperatures is investigated. Low current and high current beta instability is determined to be an emitter perimeter effect. Since most of the high-performance ECL (emitter coupled logic) circuits operate at high current levels, a predictive/quantitative model is developed to determine the stability and reliability of self-aligned bipolar transistors in the high-current regime
Keywords :
bipolar transistors; current density; hot carriers; reliability; semiconductor device models; stability; Si; current density; elevated temperatures; emitter coupled logic; emitter perimeter effect; forward active stress; high current beta instability; high performance ECL circuits; high-current regime; hot carrier induced degradation; poly-emitter bipolar transistors; polysilicon; predictive/quantitative model; reliability; self-aligned bipolar transistors; stability; Bipolar transistors; Circuit stability; Coupling circuits; Current density; Degradation; Hot carriers; Logic circuits; Predictive models; Stress; Temperature;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1990., Proceedings of the 1990
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1990.171157
