An active pixel sensor (APS) based on high gain CMOS compatible lateral bipolar transistor (LBT) on SOS substrate with backside illumination

Author

Xu, Chen ; Shen, Chao ; Ko, Ping K. ; Chan, Mansun

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

2

fYear

2003

fDate

22-24 Oct. 2003

Firstpage

1283

Abstract

In this paper, an innovative Active Pixel Sensor based on high gain CMOS compatible Lateral Bipolar Transistor (LBT) on Silicon-on-Sapphire (SOS) substrate has been introduced. A number of unique features are presented in the new design to overcome the difficulties to fabricate high performance APS in SOI related technology, including: (1) PMOSFET reset transistor to increase pixel voltage swing without area penalty; (2) a LBT as charge sensing element to increase responsivity; and (3) backside illumination through the transparent sapphire substrate to improve optical transmission. The APS has been implemented in a Peregrine´s 0.5 μm SOS CMOS process and verified to work at a low power supply voltage of 1.2 V.

Keywords

CMOS image sensors; CMOS integrated circuits; MOSFET; bipolar transistors; silicon-on-insulator; 0.5 micron; 1.2 V; PMOSFET reset transistor; SOS substrate; Silicon-on-Sapphire substrate; active pixel sensor; backside illumination; charge sensing element; high gain CMOS compatible lateral bipolar transistor; low power supply voltage; optical transmission; pixel voltage swing; responsivity; Bipolar transistors; CMOS image sensors; CMOS process; CMOS technology; Lighting; Low voltage; MOSFET circuits; Optical sensors; Power supplies; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2003. Proceedings of IEEE

Print_ISBN

0-7803-8133-5

Type

conf

DOI

10.1109/ICSENS.2003.1279151

Filename

1279151