• DocumentCode
    2706552
  • Title

    Design guidelines for deep-sub-micrometer interconnections

  • Author

    Ushiku, Yukihiro ; Kushibe, Hidefumi ; Ono, Hisako ; Nishiyama, Akira

  • Author_Institution
    Toshiba Corp., Kawasaki, Japan
  • fYear
    1990
  • fDate
    12-13 Jun 1990
  • Firstpage
    413
  • Lastpage
    415
  • Abstract
    Design guidelines for deep-submicrometer interconnections are proposed. Wiring capacitance, interconnection delays, and crosstalk noise were simulated using a three-dimensional capacitance simulator and SPICE, in order to define such interconnection parameters as the thickness and material of the conductors and insulators and the ratio of line width to spacing. Based on this analysis, it is recommended that the aspect ratio be less than one. The importance of low-resistivity metals at sub-half-micrometer dimensions is also demonstrated. The extreme limit for interconnections does not extend very far beyond 0.2 μm, so a new design concept will be needed for deep-submicrometer VLSI circuits
  • Keywords
    VLSI; crosstalk; delays; electronic engineering computing; integrated circuit technology; metallisation; 0.2 to 0.5 micron; SPICE; VLSI circuits; crosstalk noise; deep-sub-micrometer interconnections; interconnection delays; low-resistivity metals; submicron ICs; three-dimensional capacitance simulator; Capacitance; Conducting materials; Crosstalk; Delay; Guidelines; Insulation; Integrated circuit interconnections; SPICE; Very large scale integration; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
  • Conference_Location
    Santa Clara, CA
  • Type

    conf

  • DOI
    10.1109/VMIC.1990.127916
  • Filename
    127916