DocumentCode
2706552
Title
Design guidelines for deep-sub-micrometer interconnections
Author
Ushiku, Yukihiro ; Kushibe, Hidefumi ; Ono, Hisako ; Nishiyama, Akira
Author_Institution
Toshiba Corp., Kawasaki, Japan
fYear
1990
fDate
12-13 Jun 1990
Firstpage
413
Lastpage
415
Abstract
Design guidelines for deep-submicrometer interconnections are proposed. Wiring capacitance, interconnection delays, and crosstalk noise were simulated using a three-dimensional capacitance simulator and SPICE, in order to define such interconnection parameters as the thickness and material of the conductors and insulators and the ratio of line width to spacing. Based on this analysis, it is recommended that the aspect ratio be less than one. The importance of low-resistivity metals at sub-half-micrometer dimensions is also demonstrated. The extreme limit for interconnections does not extend very far beyond 0.2 μm, so a new design concept will be needed for deep-submicrometer VLSI circuits
Keywords
VLSI; crosstalk; delays; electronic engineering computing; integrated circuit technology; metallisation; 0.2 to 0.5 micron; SPICE; VLSI circuits; crosstalk noise; deep-sub-micrometer interconnections; interconnection delays; low-resistivity metals; submicron ICs; three-dimensional capacitance simulator; Capacitance; Conducting materials; Crosstalk; Delay; Guidelines; Insulation; Integrated circuit interconnections; SPICE; Very large scale integration; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location
Santa Clara, CA
Type
conf
DOI
10.1109/VMIC.1990.127916
Filename
127916
Link To Document