Title :
A 4-Mbit CMOS SRAM with 8-ns serial-access time
Author :
Kuriyama, H. ; Hirose, Tatsuya ; Murakami, Shinsuke ; Wada, Tomotaka ; Fujita, Kinya ; Nishimura, Yasutaro ; Anami, K.
Abstract :
An 8-ns serial access time has been realized in a 4-Mb static RAM with newly proposed circuits (hierarchical shift registers and look-ahead circuits) which can access up to 4 Mb. This memory realizes a 125-MHz fast serial READ/WRITE operation suitable for ultra-high-speed memory systems such as image-processing systems, high-speed testing systems, and supercomputers. This function is also beneficial for reducing the testing time of the RAM
Keywords :
CMOS integrated circuits; SRAM chips; VLSI; integrated circuit technology; integrated memory circuits; video equipment; 125 MHz; 4 Mbit; 8 ns; CMOS SRAM; ULSI; fast serial READ/WRITE operation; hierarchical shift registers; high-speed testing systems; image-processing systems; look-ahead circuits; serial access time; static RAM; supercomputers; ultra-high-speed memory systems;
Conference_Titel :
VLSI Circuits, 1990. Digest of Technical Papers., 1990 Symposium on
Conference_Location :
Honolulu, Hawaii, USA
DOI :
10.1109/VLSIC.1990.111090
