Numerical simulation of CVD trench filling using a surface reaction coefficient model

Author

Rey, Juan C. ; Cheng, Lie-Yea ; McVittie, James P. ; Saraswat, Krishna C.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

fYear

1990

fDate

12-13 Jun 1990

Firstpage

425

Lastpage

427

Abstract

A simulator has been developed to predict the surface evolution during deposition of different structures. This simulator is part of the Stanford Profile Emulator for Etching and Deposition in IC Engineering (SPEEDIE). Recently, it has been shown by L.Y. Cheng et al. (1989) that low-pressure chemical vapor deposition (LPCVD) of SiO₂ can be characterized by a single surface reaction coefficient determined by the source gases and processing conditions. Experimental and simulation results of LPCVD SiO₂ trench filling from two different sources (silane and DES) are presented. The utility of this type of simulation is illustrated through plots of trench design to be completely filled in CVD processes

Keywords

chemical vapour deposition; digital simulation; electronic engineering computing; integrated circuit technology; CVD trench filling; DES; LPCVD; SPEEDIE; SiO₂; Stanford Profile Emulator; chemical vapor deposition; low pressure CVD; numerical simulation; processing conditions; silane; source gases; surface reaction coefficient model; Etching; Filling; Gases; Gaussian distribution; Monte Carlo methods; Numerical simulation; Predictive models; Process control; Testing; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE

Conference_Location

Santa Clara, CA

Type

conf

DOI

10.1109/VMIC.1990.127919

Filename

127919