• DocumentCode
    2707103
  • Title

    A 4 Mb 5 V-only flash EEPROM with sector erase

  • Author

    Stiegler, Harvey ; Ashmore, Buster ; Bussey, Rick ; Gill, Manzur ; Lin, Sung ; McConnell, Mike ; McElroy, Dave ; Schreck, John ; Shah, Pradeep ; Truong, Phat ; Esquivel, A.L. ; Paterson, Jim ; Riemenschneider, Bert

  • fYear
    1990
  • fDate
    7-9 June 1990
  • Firstpage
    103
  • Lastpage
    104
  • Abstract
    A full 4-Mb flash EEPROM was fabricated in 0.8-μm CMOS and its functionality was verified. Conservative 1.0-μm features were used in the periphery, resulting in a die area of 95 mm2. The device features 5-V-only operation and either full-chip or sector erase. A segmented architecture, remote row decode, and innovative design techniques provide the sector erase feature and high-voltage handling with improved breakdown protection and isolation
  • Keywords
    CMOS integrated circuits; EPROM; integrated memory circuits; 0.8 micron; 4 Mbit; 5 V; 5-V-only operation; CMOS; breakdown protection; design techniques; flash EEPROM; full-chip erase; high-voltage handling; isolation; remote row decode; sector erase; segmented architecture;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 1990. Digest of Technical Papers., 1990 Symposium on
  • Conference_Location
    Honolulu, Hawaii, USA
  • Type

    conf

  • DOI
    10.1109/VLSIC.1990.111116
  • Filename
    5727549
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2707103