Title :
A 4 Mb 5 V-only flash EEPROM with sector erase
Author :
Stiegler, Harvey ; Ashmore, Buster ; Bussey, Rick ; Gill, Manzur ; Lin, Sung ; McConnell, Mike ; McElroy, Dave ; Schreck, John ; Shah, Pradeep ; Truong, Phat ; Esquivel, A.L. ; Paterson, Jim ; Riemenschneider, Bert
Abstract :
A full 4-Mb flash EEPROM was fabricated in 0.8-μm CMOS and its functionality was verified. Conservative 1.0-μm features were used in the periphery, resulting in a die area of 95 mm2. The device features 5-V-only operation and either full-chip or sector erase. A segmented architecture, remote row decode, and innovative design techniques provide the sector erase feature and high-voltage handling with improved breakdown protection and isolation
Keywords :
CMOS integrated circuits; EPROM; integrated memory circuits; 0.8 micron; 4 Mbit; 5 V; 5-V-only operation; CMOS; breakdown protection; design techniques; flash EEPROM; full-chip erase; high-voltage handling; isolation; remote row decode; sector erase; segmented architecture;
Conference_Titel :
VLSI Circuits, 1990. Digest of Technical Papers., 1990 Symposium on
Conference_Location :
Honolulu, Hawaii, USA
DOI :
10.1109/VLSIC.1990.111116
