DocumentCode :
2707323
Title :
A 2.4 GHz fully integrated CMOS power amplifier using capacitive cross-coupling
Author :
Hong, JeeYoung ; Imanishi, Daisuke ; Okada, Kenichi ; Matsuzawa, Akira
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
fYear :
2010
fDate :
Aug. 28 2010-Sept. 3 2010
Firstpage :
1
Lastpage :
4
Abstract :
The paper presented a 2.4GHz fully integrated CMOS power amplifier using capacitive cross-coupling, fabricated in 0.18μm CMOS. With a 3.3-V supply voltage, PAEmax and PAE at 1 dB compression point are 34.3% and 26.8%. P1dB, Psat, and PG are 25.2dBm, 27.7dBm and 26.5dB, respectively. The advantages of the proposed capacitive-cross-coupled PA are the improvement of reverse isolation and the area saving.
Keywords :
CMOS analogue integrated circuits; electromagnetic coupling; power amplifiers; CMOS power amplifier; area saving; capacitive cross-coupling; frequency 2.4 GHz; reverse isolation; size 0.18 mum; voltage 3.3 V; CMOS integrated circuits; CMOS technology; Capacitance; Gain; Logic gates; Power amplifiers; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wireless Information Technology and Systems (ICWITS), 2010 IEEE International Conference on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7091-4
Type :
conf
DOI :
10.1109/ICWITS.2010.5612280
Filename :
5612280
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2707323
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