• DocumentCode
    270755
  • Title

    Two-dimensional modeling of an ultra-thin body single-gate Si Tunnel-FET

  • Author

    Graef, Michael ; Holtij, Thomas ; Hain, Fabian ; Kloes, Alexander ; Iñíguez, Benjamin

  • Author_Institution
    Competence Centre for Nanotechnol. & Photonics, Tech. Hochschule Mittelhessen, Giessen, Germany
  • fYear
    2014
  • fDate
    7-9 April 2014
  • Firstpage
    101
  • Lastpage
    104
  • Abstract
    In the last few years the Tunnel-FET has become a promising device to be the successor of the classical MOSFET due to its steep switching behavior with subthreshold slopes (S) below 60 mV/dec. However, due to trap-assisted-tunneling (TAT) at the channel junctions the slope is significantly influenced. In this paper a 2D analytical band-to-band current model for ultra-thin body (UTB) single-gate (SG) Tunnel-FETs is presented. The model includes a solution for the trap-assisted-tunneling (TAT) current. The model results are compared against TCAD Sentaurus simulations and device measurement data.
  • Keywords
    elemental semiconductors; field effect transistors; silicon; tunnelling; 2D analytical band-to-band current model; Si; TAT; TCAD Sentaurus simulation; UTB SG; band-to-band current model; channel junction; steep switching behavior; subthreshold slope; trap-assisted-tunneling; two-dimensional modeling; ultrathin body single-gate Si tunnel-FET; Data models; Doping; Electric potential; Electrostatics; Junctions; Semiconductor process modeling; Tunneling; 2-D Poisson; Single-Gate (SG) Tunnel-FET; Trap-Assisted-Tunneling (TAT) Model; Ultra-Thin Body (UTB); analytical modeling; conformal mapping;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration on Silicon (ULIS), 2014 15th International Conference on
  • Conference_Location
    Stockholm
  • Type

    conf

  • DOI
    10.1109/ULIS.2014.6813926
  • Filename
    6813926
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=270755