Title :
The photoresponse of Hg0.722Cd0.278Te infrared photodiodes with a heavily doped n Region
Author :
Wang, J. ; Chen, X.S. ; Hu, W.D. ; Lu, W. ; Xu, F.Q.
Abstract :
In this paper, we report on two-dimensional (2D) numerical simulations of photoresponse for HgCdTe infrared photodiode. Effects of conduction band non-parabolic and band gap narrowing (BGN) have been investigated in detail. By taking into account the contributions: (i) the Burstein-Moss (BM) shift with a non-parabolic conduction band, (ii) the BGN effect, and (iii) the Hg-vacancy-induced acceptor trap level, we have obtained the photoresponse of Hg0.722Cd0.278Te infrared photodiode. Our simulation results are in good agreement with those in experiments.
Keywords :
II-VI semiconductors; cadmium compounds; conduction bands; energy gap; heavily doped semiconductors; impurity states; infrared detectors; mercury compounds; numerical analysis; photodetectors; photodiodes; vacancies (crystal); wide band gap semiconductors; 2D numerical simulations; Burstein-Moss shift; Hg-vacancy-induced acceptor trap level; Hg0.722Cd0.278Te; HgCdTe infrared photodiode; band gap narrowing; heavily doped n region; nonparabolic conduction band; photoresponse; Materials; Numerical models; Photodiodes; Photonic band gap; Photovoltaic systems; Semiconductor process modeling;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612301
