Laser planarization of AlSiCu on various barrier metals for VLSI

Author

Yu, Chang ; Doan, Trung T. ; Kim, Sung

Author_Institution

Micron Technol. Inc., Boise, ID, USA

fYear

1990

fDate

12-13 Jun 1990

Firstpage

444

Lastpage

446

Abstract

Laser planarization of AlSiCu film on diffusion barriers of Ti/RTA TiN, Ti, RTA TiN, reactive TiN/Ti, and TiW was investigated to determine the effect of the barrier layer on the process window and junction integrity. While the process window did not vary significantly for various diffusion barriers investigated, each barrier scheme showed a different degree of effectiveness in preserving the junction integrity during laser processing. In addition, for a given diffusion barrier scheme, the junction integrity was found to depend on the substrate temperature and optical fluence

Keywords

VLSI; aluminium alloys; copper alloys; integrated circuit technology; metallisation; silicon alloys; AlSiCu film; AlSiCu-Ti-TiN-Ti-TiN; AlSiCu-TiN-Ti; AlSiCu-TiW; IC technology; VLSI; barrier metals; diffusion barriers; junction integrity; laser planarization; laser processing; multilevel interconnection; optical fluence; process window; substrate temperature; Contacts; Optical films; Optical pulses; Optical sensors; Planarization; Power lasers; Substrates; Temperature dependence; Tin; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE

Conference_Location

Santa Clara, CA

Type

conf

DOI

10.1109/VMIC.1990.127925

Filename

127925