DocumentCode
2707930
Title
Demonstration of the self-mixing effect with a planar gunn diode at millimeter-wave frequency
Author
Lok, L.B. ; Li, Chong ; Khalid, A. ; Pilgrim, N.J. ; Dunn, G.M. ; Cumming, D.R.S.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
fYear
2010
fDate
5-10 Sept. 2010
Firstpage
1
Lastpage
2
Abstract
In this paper, we demonstrate the operation of a truly planar Gunn diode working as a self-oscillating mixer at millimeter-wave frequency. The Gunn diode was fabricated in a GaAs/Al0.23Ga0.77As layer structure. An initial proof-of-concept prototype yielded a measured conversion loss of around 20±2.5 dB between 30 GHz and 40 GHz.
Keywords
Gunn diodes; gallium arsenide; losses; millimetre wave diodes; millimetre wave mixers; oscillations; GaAs-Al0.23Ga0.77As; conversion loss; frequency 30 GHz to 40 GHz; millimeter-wave frequency; planar Gunn diode; self-mixing effect; self-oscillating mixer; Loss measurement; Mixers; Oscillators; Probes; Radio frequency; Signal generators;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location
Rome
Print_ISBN
978-1-4244-6655-9
Type
conf
DOI
10.1109/ICIMW.2010.5612316
Filename
5612316
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