A wideband CMOS low-noise amplifier for 3–5 GHz UWB systems

Author

Duan, Ji-hai ; Han, Xiao-ting ; Li, Sheng

Author_Institution

Sch. of Inf. &Commun., Guilin Univ. of Electron. Technol., Guilin, China

fYear

2009

fDate

27-29 Oct. 2009

Firstpage

1002

Lastpage

1005

Abstract

A complete modeling methodology for fully integrated low noise amplifier (LNA) for ultra-wideband (UWB) systems employing an input three-section band-pass Chebyshev filter is discussed in this paper. This input network has lower complexity and good reflected coefficient from 3GHz to 5GHz. An output matching source-follower buffer is designed specially to improve the power gain of the amplifier. The LNA is designed in a 0.18Â¿m RF CMOS technology. The result of simulation shows that a gain from 8.6 to 9.5 dB, the minimum noise figure (NF) is 2.7dB and with good input and output matching from 3GHz to 5GHz. The total power consumption is 15 mW under a 1.8V supply. The gain ripple is less than 1dB in every band group.

Keywords

CMOS integrated circuits; Chebyshev filters; band-pass filters; field effect MMIC; low noise amplifiers; microwave amplifiers; ultra wideband communication; wideband amplifiers; Chebyshev filter; RF CMOS technology; band-pass filter; frequency 3 GHz to 5 GHz; gain 8.6 dB to 9.5 dB; size 0.18 mum; source follower buffer; ultra wideband systems; voltage 1.8 V; wideband low noise amplifier; Band pass filters; Broadband amplifiers; CMOS technology; Chebyshev approximation; Impedance matching; Low-noise amplifiers; Power amplifiers; Power system modeling; Semiconductor device modeling; Ultra wideband technology; CMOS; Chebyshev filter; low noise amplifier(LNA); noise figure(NF); ultra-wideband(UWB);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2009 3rd IEEE International Symposium on

Conference_Location

Beijing

Print_ISBN

978-1-4244-4076-4

Type

conf

DOI

10.1109/MAPE.2009.5355851

Filename

5355851