Application note for the construction of SiC medium power converter with high switching frequency

The article addresses comments, and mistakes in the design of medium-power converters with high switching frequencies from a practical perspective. The described converters are equipped with semiconductor switch based on the SiC. The SiC semiconductor material is described in brief and its characteristics and advantages are compared with conventional Si semiconductor material. Further description of the drive circuit of SiC transistors is made. The following passage describes two DC/DC converters. The first design proved to have failed and is presented to show the mistakes in the design and implementation of unnecessary adjustments. The second converter of a reliable design is described with respect to design changes and its functionality is demonstrated by experimental measurements in function of buck DC/DC converter with the 560V input voltage.