Improved characteristics of 4H-SiC MESFETs with partly p-type doped space layer

Author

Huang, Wen ; Guo, Yunchuan ; Xu, Yuehang ; Zheng, Wei ; Xu, Ruimin

Author_Institution

EHF Key Lab. of Fundamental Sci., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2009

fDate

27-29 Oct. 2009

Firstpage

1012

Lastpage

1015

Abstract

4H-SiC MESFET with partly p-type doped space layer is proposed and the DC and RF characteristics are analyzed in this paper by 2D numerical simulation. The simulated results show that the breakdown voltage is about 56% larger than that of the conventional structure, and the saturated drain current obtained 4.4% enhancement too. The calculated maximum output power density at operation point V_GS=-10 V, V_DS=40 V are 10.8 W/mm and 6.2 W/mm respectively for 4H-SiC MESFETs with the proposed structure and conventional structure. As compared with the conventional structure, RF simulation results show that the MESFETs with partly p-type doped space layer have a 2.7 dB gain improvement at 2 GHz.

Keywords

Schottky gate field effect transistors; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; 2D numerical simulation; 4H-SiC MESFET; DC characteristics; RF characteristics; SiC; breakdown voltage; frequency 2 GHz; gain 2.7 dB; maximum output power density; partly p-type doped space layer; saturated drain current; voltage -10 V; voltage 40 V; Breakdown voltage; Doping; Laboratories; MESFETs; Paper technology; Power generation; Radio frequency; Schottky barriers; Space technology; Thermal conductivity; 4H-SiC; MESFET; buried-channel; gate field plate;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2009 3rd IEEE International Symposium on

Conference_Location

Beijing

Print_ISBN

978-1-4244-4076-4

Type

conf

DOI

10.1109/MAPE.2009.5355855

Filename

5355855