Title :
Improved characteristics of 4H-SiC MESFETs with partly p-type doped space layer
Author :
Huang, Wen ; Guo, Yunchuan ; Xu, Yuehang ; Zheng, Wei ; Xu, Ruimin
Author_Institution :
EHF Key Lab. of Fundamental Sci., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
4H-SiC MESFET with partly p-type doped space layer is proposed and the DC and RF characteristics are analyzed in this paper by 2D numerical simulation. The simulated results show that the breakdown voltage is about 56% larger than that of the conventional structure, and the saturated drain current obtained 4.4% enhancement too. The calculated maximum output power density at operation point VGS=-10 V, VDS=40 V are 10.8 W/mm and 6.2 W/mm respectively for 4H-SiC MESFETs with the proposed structure and conventional structure. As compared with the conventional structure, RF simulation results show that the MESFETs with partly p-type doped space layer have a 2.7 dB gain improvement at 2 GHz.
Keywords :
Schottky gate field effect transistors; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; 2D numerical simulation; 4H-SiC MESFET; DC characteristics; RF characteristics; SiC; breakdown voltage; frequency 2 GHz; gain 2.7 dB; maximum output power density; partly p-type doped space layer; saturated drain current; voltage -10 V; voltage 40 V; Breakdown voltage; Doping; Laboratories; MESFETs; Paper technology; Power generation; Radio frequency; Schottky barriers; Space technology; Thermal conductivity; 4H-SiC; MESFET; buried-channel; gate field plate;
Conference_Titel :
Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2009 3rd IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-4076-4
DOI :
10.1109/MAPE.2009.5355855
