Title :
Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors
Author :
Voldman, S. ; Juliano, P. ; Schmidt, N. ; Johnson, R. ; Lanzerotti, L. ; Joseph, A. ; Brennan, C. ; Dunn, J. ; Harame, D. ; Rosenbaum, E. ; Meyerson, B.
Author_Institution :
Semicond. Res. & Dev. Center, IBM Corp., Essex Junction, VT, USA
Abstract :
This paper investigates high-current and electrostatic discharge (ESD) phenomena in pseudomorphic epitaxial-base silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) in base-collector, base-emitter, collector-emitter and collector-to-substrate configurations. Transmission line pulse (TLP) and ESD human body model (HBM) wafer-level reliability testing of SiGe HBTs is completed for high-current characterization and evaluation of the ESD robustness of a BiCMOS SiGe technology.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; electric current; electrostatic discharge; heterojunction bipolar transistors; semiconductor device reliability; semiconductor device testing; semiconductor materials; BiCMOS SiGe technology; ESD HBM wafer-level reliability testing; ESD human body model wafer-level reliability testing; ESD phenomena; ESD robustness; SiGe; SiGe HBTs; base-collector configuration; base-emitter configuration; collector-emitter configuration; collector-to-substrate configuration; electrostatic discharge; epitaxial-base silicon-germanium heterojunction bipolar transistors; high-current characterization; high-current phenomena; pseudomorphic epitaxial-base SiGe HBTs; pseudomorphic epitaxial-base SiGe heterojunction bipolar transistors; transmission line pulse wafer-level reliability testing; Biological system modeling; Electrostatic discharge; Germanium silicon alloys; Heterojunction bipolar transistors; Humans; Semiconductor device modeling; Semiconductor process modeling; Silicon germanium; Testing; Transmission lines;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-58537-018-5
DOI :
10.1109/EOSESD.2000.890052
