Title :
High current characteristics of devices in a 0.18 /spl mu/m CMOS technology
Author :
Worley, E. ; Salem, Ali ; Sittampalam, Yoga
Author_Institution :
Conexant Syst., Newport Beach, CA, USA
Abstract :
ESD protection networks can involve several different types of devices and associated interconnect. This paper examines the high current performance of several devices that can be found in the I/O cells of a 0.18 micron CMOS technology. Devices characterized include NFETs with and without N well drain resistors including segmented resistors, N well resistors, N channel field snap-back devices, PFETs, and diodes. Also examined is the performance of metal, contacts, and vias. Diode interconnect is also analyzed with respect to failure point and parasitic resistance.
Keywords :
CMOS integrated circuits; MOSFET; electric resistance; electrostatic discharge; failure analysis; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit reliability; protection; resistors; semiconductor diodes; 0.18 micron; CMOS technology; ESD protection devices; ESD protection network interconnects; ESD protection networks; I/O cell devices; N channel field snap-back devices; N well drain resistors; N well resistors; NFETs; PFETs; contacts; diode interconnect; diodes; failure point; high current characteristics; high current performance; metallisation; parasitic resistance; segmented resistors; vias; CMOS technology; Clamps; Current density; Diodes; Electrostatic discharge; Failure analysis; Protection; Resistors; Tin; Voltage;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-58537-018-5
DOI :
10.1109/EOSESD.2000.890089
