DocumentCode
2708367
Title
Temperature Acceleration of Dielectric Charging in RF MEMS Capacitive Switches
Author
Yuan, Xiaobin ; Peng, Zhen ; Hwang, James C M ; Forehand, David ; Goldsmith, Charles L.
Author_Institution
Lehigh Univ., Bethlehem, PA
fYear
2006
fDate
11-16 June 2006
Firstpage
47
Lastpage
50
Abstract
Temperature acceleration of dielectric charging effects in state-of-the-art RF MEMS capacitive switches was characterized and modeled. From the measured charging and discharging transient currents at different temperatures, densities and time constants of traps in the dielectric were extracted. It was found that, while charging and discharging time constants are relatively independent of temperature, steady-state charge densities increase with temperature. A charging model was constructed to predict the amount of charge injected into the dielectric and the corresponding shift in actuation voltage under different temperatures. Agreement was obtained between the model prediction and experimental data
Keywords
dielectric materials; microswitches; RF MEMS capacitive switches; dielectric charging effects; steady-state charge densities; temperature acceleration; Acceleration; Current measurement; Density measurement; Dielectric measurements; Predictive models; Radiofrequency microelectromechanical systems; Steady-state; Switches; Temperature; Time measurement; MEMS; RF; charging; dielectric; switch; temperature acceleration; trap;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location
San Francisco, CA
ISSN
0149-645X
Print_ISBN
0-7803-9541-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2006.249923
Filename
4014814
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