Title :
Gain and efficiency of THz donor lasing in axially stressed silicon crystal
Author :
Shastin, V.N. ; Zhukavin, R.Kh. ; Kovalevsky, K.A. ; Tsyplenkov, V.V. ; Pavlov, S.G. ; Hübers, H.
Author_Institution :
Inst. for Phys. of Microstructures, Russian Acad. of Sci., Nizhny Novgorod, Russia
Abstract :
Liquid helium temperature experimental study of terahertz (4-6 THz) lasing of optically excited group-V donors in axially compressed silicon crystal are presented and discussed.
Keywords :
elemental semiconductors; semiconductor lasers; silicon; submillimetre wave lasers; Si; axially compressed silicon crystal; frequency 4 THz to 6 THz; group-V donors; liquid helium temperature; silicon crystal; terahertz donor lasing; Bismuth; Compressive stress; Crystals; Laser excitation; Laser modes; Silicon;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612342
