Threshold of ESD damage to GMR sensor

Author

Tao, Rock ; Zhao, FG

Author_Institution

SAE Magnectics (HK) Ltd., Dongguan, China

fYear

2000

fDate

26-28 Sept. 2000

Firstpage

327

Lastpage

329

Abstract

There are basically two kinds of ESD damage modes for GMR sensors in current GMR head gimbal assembly (HGA) and head stack assembly (HSA) processes: the current damage mode and the voltage damage mode. The current damage mode accounts for most of the ESD damage in actual GMR head production, which indicates that the GMR sensor gets damaged by an unexpected transient current passing through it. This paper discusses the possibility of defining a generic ESD threshold for the current damage mode.

Keywords

electronic equipment testing; electrostatic discharge; failure analysis; giant magnetoresistance; magnetic heads; magnetic sensors; magnetoresistive devices; transients; ESD damage; ESD damage modes; ESD damage threshold; GMR HGA process; GMR HSA process; GMR head gimbal assembly process; GMR head production; GMR head stack assembly process; GMR sensor; GMR sensor damage; GMR sensors; current damage mode; generic ESD threshold; transient current; voltage damage mode; Biological system modeling; Breakdown voltage; Capacitive sensors; Capacitors; Cities and towns; Electrostatic discharge; Immune system; Magnetic field measurement; Magnetic heads; Magnetic sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-58537-018-5

Type

conf

DOI

10.1109/EOSESD.2000.890094

Filename

890094