Title :
Threshold of ESD damage to GMR sensor
Author :
Tao, Rock ; Zhao, FG
Author_Institution :
SAE Magnectics (HK) Ltd., Dongguan, China
Abstract :
There are basically two kinds of ESD damage modes for GMR sensors in current GMR head gimbal assembly (HGA) and head stack assembly (HSA) processes: the current damage mode and the voltage damage mode. The current damage mode accounts for most of the ESD damage in actual GMR head production, which indicates that the GMR sensor gets damaged by an unexpected transient current passing through it. This paper discusses the possibility of defining a generic ESD threshold for the current damage mode.
Keywords :
electronic equipment testing; electrostatic discharge; failure analysis; giant magnetoresistance; magnetic heads; magnetic sensors; magnetoresistive devices; transients; ESD damage; ESD damage modes; ESD damage threshold; GMR HGA process; GMR HSA process; GMR head gimbal assembly process; GMR head production; GMR head stack assembly process; GMR sensor; GMR sensor damage; GMR sensors; current damage mode; generic ESD threshold; transient current; voltage damage mode; Biological system modeling; Breakdown voltage; Capacitive sensors; Capacitors; Cities and towns; Electrostatic discharge; Immune system; Magnetic field measurement; Magnetic heads; Magnetic sensors;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-58537-018-5
DOI :
10.1109/EOSESD.2000.890094
