A fully-protected bipolar MOSFET controller

Author

Chow, M.C.L. ; Wilcox, Milton E.

Author_Institution

National Semicond., Santa Clara, CA, USA

fYear

1990

fDate

17-18 Sept. 1990

Firstpage

226

Lastpage

229

Abstract

A description is given of a fully protected bipolar MOSFET controller which is designed to drive and protect current-sensing or standard DMOS (double-diffused metal-oxide-semiconductor) field-effect transistors in either high-side or low-side configurations. The IC is designed for use in automotive environments, and therefore protects both the discrete MOSFET and the driver IC from overvoltage, overtemperature, and short-circuit conditions. The circuit operates from 4.5 to 28 V, draws 20- mu A off-state current, and gives diagnostic feedback via an error pin.<>

Keywords

automotive electronics; bipolar integrated circuits; driver circuits; insulated gate field effect transistors; power integrated circuits; protection; 20 muA; 4.5 to 28 V; DMOSFET; automotive environments; bipolar MOSFET controller; current-sensing; diagnostic feedback; discrete MOS protection; driver IC protection; error pin; field-effect transistors; fully-protected; high-side configurations; low-side configurations; off state current; overtemperature; overvoltage; short-circuit conditions; standard DMOS; Automotive engineering; Batteries; Charge pumps; Circuit faults; Lamps; MOSFET circuits; Power MOSFET; Surge protection; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1990., Proceedings of the 1990

Conference_Location

Minneapolis, MN, USA

Type

conf

DOI

10.1109/BIPOL.1990.171169

Filename

171169